f eatures plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capab ility, low forward volt age drop high surge capab ility for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case m echanical data cases: jedec to-220 molded plastic terminals: leads solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams m aximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr20 35ct mbr20 45ct mbr20 50ct mbr20 60ct mbr20 100ct mbr20 150ct mbr20 200ct units maximum recurrent peak reverse voltage v rrm 35 45 50 60 100 150 200 v maximum rms voltage v rms 24 31 35 42 70 105 140 v maximum dc blocking voltage v dc 35 45 50 60 100 150 200 v maximum average forward rectified current at t c =135 o c i (av) 20 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=135 o c i frm 20.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 1.0 a maximum instantaneous forward voltage at (note 2) if=10a, tc=25 o c if=10a, tc=125 o c v f - 0.57 0. 79 0. 67 0. 80 0. 68 0. 82 0. 70 v 0.1 0.15 1.0 maximum instantaneous re verse current @ tc=25 at rated dc blocking voltage @ tc=125 i r 15 20 ma ma voltage rate of change, (rated v r ) dv/dt 10,000 v/us typical junction capacitance cj 400 320 pf typical thermal resistan ce per leg (note 3) r jc 1.0 2.0 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg, with heatsink size (4?x6?x0.25?) al-plate. http://www.luguang.cn mail:lge@luguang.cn mbr2035ct thru MBR20200CT 1 3 2 pi n 16 . 5 0. 3 10. 2 0. 2 1 5 .0 0 .5 4. 0 0. 3 1 3 .5 0 .5 2. 6 0. 1 5 1. 4 0 . 1 0. 6 0. 1 4. 5 0 . 2 3. 1 +0 . 2 -0 . 1 |? 3 . 3 0 . 1 ?3 . 2 0 . 2 8. 2 0. 2 2. 6 0 . 2 0. 6 0. 1 ito-220ab dimensions in millimeters
fig.1- forward current derating curve average forward current. (a) 0 50 100 150 0 4 8 12 16 20 case temperature. ( c) o resistive or inductive load fig.2- maximum non-repetitive forward surge current per leg peak forward surge current. (a) 1 10 100 25 50 0 75 125 100 150 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics per leg instantaneous forward current. (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.30.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) tj=25 c 0 tj=150 c 0 mbr2035ct-mbr2045ct mbr2050ct & mbr2060ct mbr20100ct MBR20200CT fig.4- typical reverse characteristics per leg instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 mbr2035ct-mbr2045ct mbr2050ct & mbr20100ct MBR20200CT tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal impedance per leg transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance per leg junction capacitance.(pf) 0.1 1.0 10 100 100 1,000 5,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbr2035ct-mbr2045ct mbr2050ct & MBR20200CT pulse width=300 s 1% duty cycle 200 2,000 500 http://www.luguang.cn mail:lge@luguang.cn mbr2035ct thru MBR20200CT
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